inchange semiconductor product specification silicon npn power transistors 2SD1830 description ? with to-220f package ? complement to type 2sb1228 ? high dc current gain. ? large current capacity and wide aso. ? low saturation voltage. ? darlington applications ? suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 110 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 6 v i c collector current 8 a i cm collector current-peak 12 a t c =25 ?? 20 p c collector dissipation 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1830 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =5ma; i e =0 110 v v (br)ceo collector-emitter breakdown voltage i c =50ma; r be = ?t 100 v v cesat collector-emitter saturation voltage i c =4a ; i b =8ma 0.9 1.5 v v besat base-emitter saturation voltage i c =4a ; i b =8ma 2.0 v i cbo collector cut-off current v cb =80v;i e =0 0.1 ma i ebo emitter cut-off current v eb =5v;i c =0 3.0 ma h fe dc current gain i c =4a ; v ce =3v 1500 4000 f t transition frequency i c =4a ; v ce =5v 20 mhz switching times t on turn-on time 0.6 | s t stg storage time 4.8 | s t f fall time i c =500i b1 =-500i b2 =4a v cc =50v ,r l =12.5 |? 1.6 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD1830 package outline fig.2 outline dimensions
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